Effect of plasma process on low-k material and barrier layer performance
Identifieur interne : 001567 ( Main/Exploration ); précédent : 001566; suivant : 001568Effect of plasma process on low-k material and barrier layer performance
Auteurs : X. T. Chen [Singapour] ; D. Gui [Singapour] ; Z. Q. Mo [Singapour] ; A. Y. Du [Singapour] ; D. Z. Chi [Singapour] ; W. D. Wang [Singapour] ; Y. H. Wang [Singapour] ; D. Lu [Singapour] ; L. J. Tang [Singapour] ; W. H. Li [Singapour] ; L. Y. Wong [Singapour]Source :
- Thin solid films [ 0040-6090 ] ; 2006.
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Abstract
Low-k material is susceptible to the plasma damage in fabrication of damascene structure and hence the metal barrier performance will be affected. It is very important to characterize the effect of plasma process on metal barrier performance and fundamentally understand interfacial interaction between low-k material and metal barrier layer for implementing low-k, especially ultra low-k in Cu interconnect on 65 nm node and beyond. In this paper, we present our studies on the effects of two key plasma processes, H2/He reactive plasma clean treatment (RPC) and H2N2 etch, on the barrier layer performance. We also present a solution to enhance the Ta barrier layer performance. The new implementation successfully prevented Cu from diffusing into polymer low-k after annealing at 200 °C for 1000 h. The methodology is proven to be effective for characterizing and improving pore-sealing and barrier performance for Cu/porous ultra low-k interconnect.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of plasma process on low-k material and barrier layer performance</title><author><name sortKey="Chen, X T" sort="Chen, X T" uniqKey="Chen X" first="X. T." last="Chen">X. T. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Gui, D" sort="Gui, D" uniqKey="Gui D" first="D." last="Gui">D. Gui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Mo, Z Q" sort="Mo, Z Q" uniqKey="Mo Z" first="Z. Q." last="Mo">Z. Q. Mo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>PSB Corporation, 1 Science Park Drive</s1><s2>Singapore 118221</s2><s3>SGP</s3><sZ>3 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 118221</wicri:noRegion></affiliation></author><author><name sortKey="Du, A Y" sort="Du, A Y" uniqKey="Du A" first="A. Y." last="Du">A. Y. Du</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Chi, D Z" sort="Chi, D Z" uniqKey="Chi D" first="D. Z." last="Chi">D. Z. Chi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Wang, W D" sort="Wang, W D" uniqKey="Wang W" first="W. D." last="Wang">W. D. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Y H" sort="Wang, Y H" uniqKey="Wang Y" first="Y. H." last="Wang">Y. H. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Lu, D" sort="Lu, D" uniqKey="Lu D" first="D." last="Lu">D. Lu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Tang, L J" sort="Tang, L J" uniqKey="Tang L" first="L. J." last="Tang">L. J. Tang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Li, W H" sort="Li, W H" uniqKey="Li W" first="W. H." last="Li">W. H. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Wong, L Y" sort="Wong, L Y" uniqKey="Wong L" first="L. Y." last="Wong">L. Y. Wong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">07-0084222</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 07-0084222 INIST</idno><idno type="RBID">Pascal:07-0084222</idno><idno type="wicri:Area/PascalFrancis/Corpus">000040</idno><idno type="wicri:Area/PascalFrancis/Curation">000034</idno><idno type="wicri:Area/PascalFrancis/Checkpoint">000044</idno><idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000044</idno><idno type="wicri:doubleKey">0040-6090:2006:Chen X:effect:of:plasma</idno><idno type="wicri:Area/Main/Merge">001593</idno><idno type="wicri:Area/Main/Curation">001567</idno><idno type="wicri:Area/Main/Exploration">001567</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Effect of plasma process on low-k material and barrier layer performance</title><author><name sortKey="Chen, X T" sort="Chen, X T" uniqKey="Chen X" first="X. T." last="Chen">X. T. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Gui, D" sort="Gui, D" uniqKey="Gui D" first="D." last="Gui">D. Gui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Mo, Z Q" sort="Mo, Z Q" uniqKey="Mo Z" first="Z. Q." last="Mo">Z. Q. Mo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>PSB Corporation, 1 Science Park Drive</s1><s2>Singapore 118221</s2><s3>SGP</s3><sZ>3 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 118221</wicri:noRegion></affiliation></author><author><name sortKey="Du, A Y" sort="Du, A Y" uniqKey="Du A" first="A. Y." last="Du">A. Y. Du</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Chi, D Z" sort="Chi, D Z" uniqKey="Chi D" first="D. Z." last="Chi">D. Z. Chi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Wang, W D" sort="Wang, W D" uniqKey="Wang W" first="W. D." last="Wang">W. D. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Y H" sort="Wang, Y H" uniqKey="Wang Y" first="Y. H." last="Wang">Y. H. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Lu, D" sort="Lu, D" uniqKey="Lu D" first="D." last="Lu">D. Lu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Tang, L J" sort="Tang, L J" uniqKey="Tang L" first="L. J." last="Tang">L. J. Tang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Li, W H" sort="Li, W H" uniqKey="Li W" first="W. H." last="Li">W. H. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author><author><name sortKey="Wong, L Y" sort="Wong, L Y" uniqKey="Wong L" first="L. Y." last="Wong">L. Y. Wong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II</s1><s2>Singapore 117685</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117685</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Thin solid films</title><title level="j" type="abbreviated">Thin solid films</title><idno type="ISSN">0040-6090</idno><imprint><date when="2006">2006</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Thin solid films</title><title level="j" type="abbreviated">Thin solid films</title><idno type="ISSN">0040-6090</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier layer</term><term>Copper</term><term>Damage</term><term>Depth profiles</term><term>Diffusion</term><term>Experimental study</term><term>Implementation</term><term>Interconnections</term><term>Low k dielectric</term><term>Performance</term><term>Plasma assisted processing</term><term>Polymers</term><term>Porous materials</term><term>Secondary ion mass spectra</term><term>Thermal annealing</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche barrière</term><term>Performance</term><term>Endommagement</term><term>Diélectrique basse permittivité</term><term>Cuivre</term><term>Traitement par plasma</term><term>Implémentation</term><term>Polymère</term><term>Recuit thermique</term><term>Matériau poreux</term><term>Diffusion(transport)</term><term>Interconnexion</term><term>Spectre SIMS</term><term>Profil profondeur</term><term>Cu</term><term>8540L</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Cuivre</term><term>Polymère</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Low-k material is susceptible to the plasma damage in fabrication of damascene structure and hence the metal barrier performance will be affected. It is very important to characterize the effect of plasma process on metal barrier performance and fundamentally understand interfacial interaction between low-k material and metal barrier layer for implementing low-k, especially ultra low-k in Cu interconnect on 65 nm node and beyond. In this paper, we present our studies on the effects of two key plasma processes, H<sub>2</sub>/He reactive plasma clean treatment (RPC) and H<sub>2</sub>N<sub>2</sub> etch, on the barrier layer performance. We also present a solution to enhance the Ta barrier layer performance. The new implementation successfully prevented Cu from diffusing into polymer low-k after annealing at 200 °C for 1000 h. The methodology is proven to be effective for characterizing and improving pore-sealing and barrier performance for Cu/porous ultra low-k interconnect.</div></front></TEI><affiliations><list><country><li>Singapour</li></country></list><tree><country name="Singapour"><noRegion><name sortKey="Chen, X T" sort="Chen, X T" uniqKey="Chen X" first="X. T." last="Chen">X. T. Chen</name></noRegion><name sortKey="Chi, D Z" sort="Chi, D Z" uniqKey="Chi D" first="D. Z." last="Chi">D. Z. Chi</name><name sortKey="Du, A Y" sort="Du, A Y" uniqKey="Du A" first="A. Y." last="Du">A. Y. Du</name><name sortKey="Gui, D" sort="Gui, D" uniqKey="Gui D" first="D." last="Gui">D. Gui</name><name sortKey="Li, W H" sort="Li, W H" uniqKey="Li W" first="W. H." last="Li">W. H. Li</name><name sortKey="Lu, D" sort="Lu, D" uniqKey="Lu D" first="D." last="Lu">D. Lu</name><name sortKey="Mo, Z Q" sort="Mo, Z Q" uniqKey="Mo Z" first="Z. Q." last="Mo">Z. Q. Mo</name><name sortKey="Tang, L J" sort="Tang, L J" uniqKey="Tang L" first="L. J." last="Tang">L. J. Tang</name><name sortKey="Wang, W D" sort="Wang, W D" uniqKey="Wang W" first="W. D." last="Wang">W. D. Wang</name><name sortKey="Wang, Y H" sort="Wang, Y H" uniqKey="Wang Y" first="Y. H." last="Wang">Y. H. Wang</name><name sortKey="Wong, L Y" sort="Wong, L Y" uniqKey="Wong L" first="L. Y." last="Wong">L. Y. Wong</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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